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Crystal-field mediated electronic transitions of EuS up to 35 GPa

Abstract: An advanced experimental and theoretical model to explain the correlation between the electronic and local structure of Eu2+ in two diferent environments within a same compound, EuS, is presented. EuX monochalcogenides (X: O, S, Se, Te) exhibit anomalies in all their properties around 14 GPa with a semiconductor to metal transition. Although it is known that these changes are related to the 4f 75d0 ?4f 65d1 electronic transition, no consistent model of the pressure-induced modifcations of the electronic structure currently exists. We show, by optical and x-ray absorption spectroscopy, and by ab initio calculations up to 35 GPa, that the pressure evolution of the crystal feld plays a major role in triggering the observed electronic transitions from semiconductor to the half-metal and fnally to the metallic state.

 Autoría: Monteseguro V., Barreda-Argüeso J.A., Ruiz-Fuertes J., Rosa A.D., Meyerheim H.L., Irifune T., Rodriguez F.,

 Fuente: Scientific Reports, 2022, 12, 1217

 Editorial: Nature Publishing Group

 Fecha de publicación: 24/01/2022

 Nº de páginas: 9

 Tipo de publicación: Artículo de Revista

 DOI: 10.1038/s41598-022-05321-9

 ISSN: 2045-2322

 Proyecto español: PGC2018-101464-B-I00 ; PGC2018-097520-A-I00

 Url de la publicación: https://doi.org/10.1038/s41598-022-05321-9

Autoría

JOSE ANTONIO BARREDA ARGÜESO

ROSA, ANGELIKA D.

MEYERHEIM, HOLGER L.

IRIFUNE, TETSUO