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Perspective of reconfigurability of devices by low-dimensional optical phase-change III-Chalcogenides

Abstract: Realizing optically and/or electrically tunable plasmonic resonances in the visible to ultraviolet (UV) spectral region is particularly important for reconfigurable photonic device applications. Ultrathin layered group-III chalcogenides, such as GaS, GaSe, GaTe, Sb2S3, are particularly intriguing 2D materials that are revealing exotic phase-change properties with great promise for application in next generation reconfigurable electronics and optoelectronic devices. In this contribution, we present experimental and calculated results obtained on low-loss layered phase-change semiconducting materials of GaS, GaSe, GaTe, Sb2S3, which shows in addition to the conventional amorphous to crystalline phase transition (like the GST family), order-order (polytypes), metal-to-insulator transitions that can be triggered electrically, optically and via plasmonic coupling with alternative phase-change plasmonic metals.

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Congress: SPIE NanoScience + Engineering (2021 : San Diego)

Publisher: SPIE Society of Photo-Optical Instrumentation Engineers

Year of publication: 2021

Publication type: Conference object

DOI: 10.1117/12.2596554

ISSN: 0277-786X,1996-756X

European project: info:eu-repo/grantAgreement/EC/H2020/ 899598/eu/Active Optical Phase-Change Plasmonic Transdimensional Systems Enabling Femtojoule and Femtosecond Extreme Broadband Adaptive Reconfigurable Devices/PHEMTRONICS/

Publication Url: https://doi.org/10.1117/12.2596554

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