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Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure

Abstract: This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi2Se3) up to 9 GPa. The optical gap of Bi2Se3 increases from 0.17 eV at ambient pressure to 0.45 eV at 8 GPa. The quenching of the Burstein-Moss effect in degenerate samples and the shift of the free-carrier plasma frequency to lower energies reveal a quick decrease of the bulk three-dimensional (3D) electron concentration under pressure. On increasing pressure the behavior of Hall electron concentration and mobility depends on the sample thickness, consistently with a gradual transition from mainly 3D transport at ambient pressure to mainly two-dimensional (2D) transport at high pressure. Two-carrier transport equations confirm the trapping of high-mobility 3D electrons, an effect that can be related to a shallow-to-deep transformation of donor levels, associated with a change in the ordering of the conduction band minima. The high apparent areal density and low electron mobility of 2D electrons are not compatible with their expected properties in a Dirac cone. Measured transport parameters at high pressure are most probably affected by the presence of holes, either in an accumulation surface layer or as minority carriers in the bulk.

Otras publicaciones de la misma revista o congreso con autores/as de la Universidad de Cantabria

 Fuente: Physical review. B, 2012, 85, 195139

Editorial: American Physical Society

 Año de publicación: 2012

Nº de páginas: 9

Tipo de publicación: Artículo de Revista

 DOI: 10.1103/PhysRevB.85.195139

ISSN: 1098-0121,1550-235X,2469-9950,2469-9969

Proyecto español: MAT2008-06873-C02-02; MAT2007-66129

Url de la publicación: https://doi.org/10.1103/PhysRevB.85.195139

Autores/as

SEGURA, A.

PANCHAL, V.

SÁNCHEZ-ROYO, J. F.

MARÍN-BORRAS, V.

MUÑOZ-SANJOSÉ, V.

RODRÍGUEZ-HERNÁNDEZ, P.

MUÑOZ, A.

PÉREZ-GONZÁLEZ, E.