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Direct and inverse StaeblerWronski effects observed in carbon-doped hydrogenated amorphous silicon photo-detectors

Abstract: The photo-response behaviour of Amorphous Silicon Position Detectors (ASPDs) under prolonged illumination with a 681 nm diode?laser and a 633 nm He?Ne laser is presented. Both direct and inverse Staebler?Wronski effects are observed.

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Autoría: Arce P., Barcala J.M., Calvo E., Ferrando A., Josa M.I., Molinero A., Navarrete J., Oller J.C., Yuste C., Brochero J., Caldern A., Fernndez M.G., Gmez G., Gonzlez-Snchez F.J., Martnez-Rivero C., Matorras F., Rodrigo T., Ruiz-Rbol P., Scodellaro L., Sobrn M., Vila I., Virto A.L., Fernndez J.,

Fuente: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 632(1), 164-166

Editorial: North-Holland ; Elsevier Science

Año de publicación: 2011

Nº de páginas: 3

Tipo de publicación: Artículo de Revista

DOI: 10.1016/j.nima.2010.12.201

ISSN: 0168-9002,1872-9576

Url de la publicación: https://doi.org/10.1016/j.nima.2010.12.201

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