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Simulation of electrical parameters of new design of SLHC silicon sensors for large radii

Abstract: As a result of the high luminosity phase of the SLHC, for CMS a tracking system with very high granularity is mandatory and the sensors will have to withstand an extreme radiation environment of up to 1016 part/2. On this basis, a new geometry with silicon short strip sensors (strixels) is proposed. To understand their performances, test geometries are developed whose parameters can be verified and optimized using simulation of semiconductor structures. We have used the TCAD-ISE (SYNOPSYS package) software in order to simulate the main electrical parameters of different strip geometries, for p-in-n-type wafers.

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Autoría: Militaru O., Bergauer T., Bergholz M., Blüm P., De Boer W., Borras K., Cortina Gil E., Dierlamm A., Dragicevic M., Eckstein D., Erfle J., Fernandez M., Feld L., Frey M., Friedl M., Fretwurst E., Gaubas E., Gonzalez F.J., Grabiec P., Grodner M., Hartmann F., Hansel S., Hoffmann K.H., Hrubec J., Jaramillo R., Karpinski W., Kazukauskas V., Klein K., Khomenkov V., Klanner R., Krammer M., Kucharski K., Lange W., Lemaitre V., Moya D.,

Fuente: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2010, 617, (13) 11-21

Editorial: North-Holland ; Elsevier Science

Año de publicación: 2010

Nº de páginas: 2

Tipo de publicación: Artículo de Revista

DOI: 10.1016/j.nima.2009.09.102

ISSN: 0168-9002,1872-9576

Url de la publicación: https://doi.org/10.1016/j.nima.2009.09.102

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