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Importance of Spin-Orbit Interaction for the Electron Spin Relaxation in Organic Semiconductors

Abstract: Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.

Otras publicaciones de la misma revista o congreso con autores/as de la Universidad de Cantabria

 Autoría: Nuccio L., Willis M., Schulz L., Fratini S., Messina F., D'Amico M., Pratt F.L., Lord J.S., McKenzie I., Loth M., Purushothaman B., Anthony J., Heeney M., Wilson R.M., Hernández I., Cannas M., Sedlak K., Kreouzis T., Gillin W.P., Bernhard C., Drew A.J.,

 Fuente: Physical Review Letters, 2013, 110(21),216602

Editorial: American Physical Society

 Fecha de publicación: 23/05/2013

Nº de páginas: 5

Tipo de publicación: Artículo de Revista

 DOI: 10.1103/PhysRevLett.110.216602

ISSN: 0031-9007,1079-7114

Url de la publicación: https://doi.org/10.1103/PhysRevLett.110.216602

Autoría

NUCCIO, LAURA

WILLIS, MAUREEN A. C.

SCHULZ, LEANDER

FRATINI, SIMONE

MESSINA, FABRIZIO

D'AMICO, MICHELE

PRATT, FRANCIS LAURENCE

LORD, JAMES S.

MCKENZIE, IAIN D.

LOTH, MARSHA A.

PURUSHOTHAMAN, BALAJI

ANTHONY, JOHN E.

HEENEY, MARTIN J.

WILSON, R. M.

CANNAS, MARCO

SEDLAK, KAMIL

KREOUZIS, THEO

GILLIN, WILLIAM P.

BERNHARD, CHRISTIAN

DREW, ALAN J.