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Radiation resistance of double-type double-sided 3D pixel sensors

Abstract: The proposed high-luminosity upgrade of the Large Hadron Collider is expected to increase the instantaneous luminosity at the experiments' interaction points by a factor of ten. The vertex detector will be the subsystem most affected by the luminosity increase, raising substantially their occupancy and radiation-induced damage. To preserve the vertex physics performance under these new conditions, current pixel technologies have to be improved. Hybrid pixel sensors with double-sided double-type vertical electrodes (3D sensors) are becoming a mature technology for the detector layers closest to the interaction point due to their intrinsic radiation hardness. In addition, the double-sided implementation of the 3D pixel technology provides some additional technical advantages with respect to the single-sided implementation. For this study, 3D pixel sensors manufactured at the Centro Nacional de Microelectrónica of Barcelona (IMB-CNM) have been bonded to the PSI46 readout chip currently used by the Compact Muon Solenoid vertex detector. Detector performance before and after irradiation up to fluences of 5×1015neq/cm2 is presented.

Otras publicaciones de la misma revista o congreso con autores/as de la Universidad de Cantabria

 Autoría: Fernandez M., Jaramillo R., Lozano M., Munoz F.J., Pellegrini G., Quirion D., Rohe T., Vila I.,

 Fuente: Nuclear Instruments and Methods in Physics Research A

Editorial: North-Holland ; Elsevier Science

 Año de publicación: 2013

Nº de páginas: 4

Tipo de publicación: Artículo de Revista

 DOI: 10.1016/j.nima.2013.05.121

ISSN: 0168-9002,1872-9576

 Proyecto español: FPA2010-22163-C02-01(-02)

Url de la publicación: https://doi.org/10.1016/j.nima.2013.05.121

Autoría

MARCOS FERNANDEZ GARCIA

LOZANO, M.

FRANCISCA JAVIELA MUÑOZ SANCHEZ

PELLEGRINI, G.

QUIRION, D.