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Plasmonic hot-electron reconfigurable photodetector based on phase-change material Sb2S3

Abstract: Hot-carrier based photodetectors and enhanced by surface plasmons (SPs) hot-electron injection into semiconductors, are drawing significant attention. This photodetecting strategy yields to narrowband photoresponse while enabling photodetection at sub-bandgap energies of the semiconductor materials. In this work, we analyze the design of a reconfigurable photodetector based on a metal-semiconductor (MS) configuration with interdigitated dual-comb Au electrodes deposited on the semiconducting Sb2S3 phase-change material. The reconfigurability of the device relies on the changes of refractive index between the amorphous and crystalline phases of Sb2S3 that entail a modulation of the properties of the SPs generated at the dual-comb Au electrodes. An exhaustive numerical study has been realized on the Au grating parameters formed by the dual-comb electrodes, and on the SP order with the purpose of optimizing the absorption of the device, and thus, the responsivity of the photodetector. The optimized photodetector layout proposed here enables tunable narrowband photodetection from the O telecom band (? = 1310 nm) to the C telecom band (? = 1550 nm).

Otras publicaciones de la misma revista o congreso con autores/as de la Universidad de Cantabria

 Autoría: Santos G., Georghe M., Cobianu C., Modreanu M., Losurdo M., Gutiérrez Y., Moreno F.,

 Fuente: Optics Express, 2022, 30(21), 38953-38965

Editorial: Optica Publishing Group

 Fecha de publicación: 06/10/2022

Nº de páginas: 13

Tipo de publicación: Artículo de Revista

 DOI: 10.1364/OE.468917

ISSN: 1094-4087

Proyecto europeo: info:eu-repo/grantAgreement/EC/H2020/ 899598/eu/Active Optical Phase-Change Plasmonic Transdimensional Systems Enabling Femtojoule and Femtosecond Extreme Broadband Adaptive Reconfigurable Devices/PHEMTRONICS/

Url de la publicación: https://doi.org/10.1364/OE.468917