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Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers

Abstract: Dilute nitrides based on GaAs constitute a family of compounds whose main characteristic is the band-gap tunability, depending on the nitrogen content. In this work we have focussed our attention on the indium free dilute nitrides, i.e. GaNAsSb with a bandgap of around 1.1 eV, to study the effects that doping has on the crystalline structure, electrical and optical properties of the material. For such purpose, p-doped and n-doped GaNAsSb layers were grown by molecular beam epitaxy and characterized using x-ray diffraction, spectroscopic ellipsometry and photoreflectance among other techniques. The GaNAsSb optical properties match the double band-anticrossing model which is the proposed one to explain the dilute nitride band structure. However, the determined optical bandgap value does not follow any trend with doping, neither with concentration nor type. This is related with doping effects on the crystalline quality and layer composition, thus inducing a Sb gradient along layer thickness together with variations in N and Sb concentrations for different doping levels. Besides these structural variations, the complex refraction index, Hall mobility and carrier concentration as a function of temperature have been determined for these GaNAsSb layers.

 Fuente: Semiconductor Science and Technology, 2020, 35(11), 115022

 Editorial: Institute of Physics Publishing

 Fecha de publicación: 01/11/2020

 Nº de páginas: 14

 Tipo de publicación: Artículo de Revista

 DOI: 10.1088/1361-6641/abb525

 ISSN: 0268-1242,1361-6641

 Proyecto español: PCIN-2015-181-C02-01

 Url de la publicación: https://doi.org/10.1088/1361-6641/abb525

Autoría

GABÁS PÉREZ, MARÍA MERCEDES

OCHOA MARTÍNEZ, EFRAÍN

BIELAK, KATARZYNA

PUCICKI, DAMIAN

LOMBARDERO HERNÁNDEZ, IVÁN

BARRUTIA PONCELA, LAURA

FUERTES MARRÓN, DAVID

GARCÍA VARA, IVÁN

YOON, SOON FATT

LOKE, WAN KHAI

WICAKSONO, SATRIO

TAN, KIANHUAN

JOHNSON, ANDREW D.

DAVIES, J. IWAN

ALGORA DEL VALLE, CARLOS