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ALD-ZnMgO and absorber surface modifications to substitute CdS buffer layers in co-evaporated CIGSe solar cells

Abstract: High efficiency chalcopyrite thin film solar cells generally use chemical bath deposited CdS as buffer layer. The transition to Cd-free buffer layers, ideally by dry deposition methods is required to decrease Cd waste, enable all vacuum processing and circumvent optical parasitic absorption losses. In this study, Zn1-xMgxO thin films were deposited by atomic layer deposition (ALD) as buffer layers on co-evaporated Cu(In,Ga)Se2 (CIGS) absorbers. A specific composition range was identified for a suitable conduction band alignment with the absorber surface. We elucidate the critical role of the CIGS surface preparation prior to the dry ALD process. Wet chemical surface treatments with potassium cyanide, ammonium hydroxide and thiourea prior to buffer layer deposition improved the device performances. Additional in-situ surface reducing treatments conducted immediately prior to Zn1-xMgxO deposition improved device performance and reproducibility. Devices were characterised by (temperature dependant) current-voltage and quantum efficiency measurements with and without light soaking treatment. The highest efficiency was measured to be 18%.

 Fuente: EPJ Photovoltaics, 2020, 11, 12

 Editorial: EDP Sciences

 Año de publicación: 2020

 Nº de páginas: 8

 Tipo de publicación: Artículo de Revista

 DOI: 10.1051/epjpv/2020010

 ISSN: 2105-0716

Autoría

HERTWIG, RAMIS

NISHIWAKI, SHIRO

YANG, SHIH-CHI

FEURER, THOMAS

GILSHTEIN, EVGENIIA P.

TIWARI, AYODHYA NATH

CARRON, ROMAIN