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Perspective of reconfigurability of devices by low-dimensional optical phase-change III-Chalcogenides

Abstract: Realizing optically and/or electrically tunable plasmonic resonances in the visible to ultraviolet (UV) spectral region is particularly important for reconfigurable photonic device applications. Ultrathin layered group-III chalcogenides, such as GaS, GaSe, GaTe, Sb2S3, are particularly intriguing 2D materials that are revealing exotic phase-change properties with great promise for application in next generation reconfigurable electronics and optoelectronic devices. In this contribution, we present experimental and calculated results obtained on low-loss layered phase-change semiconducting materials of GaS, GaSe, GaTe, Sb2S3, which shows in addition to the conventional amorphous to crystalline phase transition (like the GST family), order-order (polytypes), metal-to-insulator transitions that can be triggered electrically, optically and via plasmonic coupling with alternative phase-change plasmonic metals.

Otras comunicaciones del congreso o articulos relacionados con autores/as de la Universidad de Cantabria

 Congreso: SPIE NanoScience + Engineering (2021 : San Diego)

 Editorial: SPIE Society of Photo-Optical Instrumentation Engineers

 Año de publicación: 2021

 Tipo de publicación: Comunicación a Congreso

 DOI: 10.1117/12.2596554

 ISSN: 0277-786X,1996-756X

 Proyecto europeo: info:eu-repo/grantAgreement/EC/H2020/ 899598/eu/Active Optical Phase-Change Plasmonic Transdimensional Systems Enabling Femtojoule and Femtosecond Extreme Broadband Adaptive Reconfigurable Devices/PHEMTRONICS/

 Url de la publicación: https://doi.org/10.1117/12.2596554

Autoría

LOSURDO, MARIA

MONDREANU, MIRCEA

HINGERL, KURT

COBET, CHRISTOPH

GEORGHE, MARIN

GARRY, GUY

ISHCHENKO, OLGA

JONUZI, TIGERES

SOLER, JORDI

PERNICE, WOLFRAM