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GaN microwave DC-DC converters

Abstract: This paper presents the design and characterization of dc-dc converters operating at microwave frequencies. The converters are based on GaN transistor class-E power amplifiers (PAs) and rectifiers. Three topologies are presented, which are: 1) a PA and synchronous rectifier, requiring two RF inputs; 2) a PA and self-synchronous rectifier with a single RF input; and 3) a power oscillator with a self-synchronous rectifier with no required RF inputs. The synchronous 1.2-GHz class- E2 converter reaches a maximum efficiency of 72% at 4.6 W. By replacing the RF input at the rectifier gate with a specific termination, a self-synchronous circuit demonstrates 75% efficiency at 4.6 W, with a maximum output power of 13 W at 58% efficiency. In the third topology, the PA is replaced by a power oscillator by providing correct feedback for class-E operation, resulting in a circuit requiring no RF inputs. This oscillating self-synchronous dc-dc converter is demonstrated at 900 MHz with an efficiency of 79% at 28 V and 12.8-W output power. Self-synchronous class-E transistor rectifier operation is analyzed theoretically in the time domain and validated with harmonic-balance simulations using an improved nonlinear model for a GaN HEMT. The simplified theoretical analysis provides a useful starting point for high-efficiency self-synchronous power rectifier design, which can, in turn, be extended to high-efficiency oscillating power inverter design.

Otras publicaciones de la misma revista o congreso con autores/as de la Universidad de Cantabria

 Autoría: Ramos I., Ruiz Lavin M., Garcia J., Maksimovic D., Popovic Z.,

 Fuente: IEEE Transactions on Microwave Theory and Techniques, 2015, Volume: 63, Issue: 12, 4473 - 4482

Editorial: Institute of Electrical and Electronics Engineers Inc.

 Fecha de publicación: 01/12/2015

Nº de páginas: 10

Tipo de publicación: Artículo de Revista

 DOI: 10.1109/TMTT.2015.2493519

ISSN: 0018-9480,1557-9670

 Proyecto español: TEC2011-29126-C03-01 ; TEC2014-58341-C4-1-R

Url de la publicación: https://doi.org/10.1109/TMTT.2015.2493519