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Cryogenic performance of a 3-14 GHz bipolar SiGe low-noise amplifier

Abstract: The performance of silicon-germanium (SiGe) transistors under cryogenico peration is analysed. The design and characterization of a 3-14 GHz low-noise amplifier (LNA) using SiGe transistors at 300 K and at 13 K are presented. A three stage amplifier is implemented with bipolar transistors model BFU910F from NXP commercially available with a plastic package. The amplifier exhibits 36.8 dB average gain with average noise temperature of 103 K and 42 mW DC power consumption at 300 K ambient temperature. Whereas cooled down to 13 K ambient temperature, it provides 32.4 dB average gain, 11.4 K average noise temperature with a minimum of 7.2 K at 3.5 GHz and a DC power dissipation of 5.8 mW. The presented LNA demonstrates an outstanding performance at cryogenic temperature for a commercial plastic packaged transistor.

 Autoría: Aja B., Villa E., de la Fuente L., Artal E.,

 Fuente: Cryogenics, 2019, 99, 18-24

 Editorial: Elsevier

 Fecha de publicación: 01/04/2019

 Nº de páginas: 10

 Tipo de publicación: Artículo de Revista

 DOI: 10.1016/j.cryogenics.2019.02.001

 ISSN: 0011-2275,1879-2235

 Proyecto español: ESP2015-70646-C2-2-R

 Url de la publicación: https://doi.org/10.1016/j.cryogenics.2019.02.001