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Accurately modeling of Zero Biased Schottky-Diodes at millimeter-wave frequencies

Abstract: This paper presents and discusses the careful modeling of a Zero Biased Diode, including low-frequency noise sources, providing a global model compatible with both wire bonding and flip-chip attachment techniques. The model is intended to cover from DC up to W-band behavior, and is based on DC, capacitance versus voltage, as well as scattering and power sweep harmonics measurements. Intensive use of 3D EM (ElectroMagnetic) simulation tools, such as HFSSTM, was done to support Zero Biased Diode parasitics modeling and microstrip board modeling. Measurements are compared with simulations and discussed. The models will provide useful support for detector designs in the W-band.

 Autoría: Gutiérrez J., Zeljami K., Fernández T., Pascual J., Tazón A.,

 Fuente: Electronics, 2019, 8(6), 696

 Editorial: MDPI

 Fecha de publicación: 20/06/2019

 Nº de páginas: 13

 Tipo de publicación: Artículo de Revista

 DOI: 10.3390/electronics8060696

 ISSN: 2079-9292

 Proyecto español: CSD2008-00068

Autoría

JESSICA GUTIERREZ ASUETA

ZELJAMI, KAOUTAR

ANTONIO TAZON PUENTE