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Temperature-dependent thermal capacitance characterization for SOI-MOSFETs

Abstract: Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on-insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through the frequency response of the output conductance, for calculating the thermal capacitance of single-finger and multi-finger SOI-MOSFETs. The model accounts for the total gate width and substrate temperature, making evident the augmented thermal coupling when multi-fingers are used. The thermal capacitances and the corresponding time constants, extracted from a variety of gate widths and number of fingers, are correctly predicted up to a substrate temperature of 150 °C.

 Autoría: Gonzalez B., Aja B., Artal E., Lazaro A., Nunez A.,

 Fuente: IEEE Transactions on Electron Devices, 2019, 66(10), 4120-4125

 Editorial: Institute of Electrical and Electronics Engineers Inc.

 Fecha de publicación: 01/10/2019

 Nº de páginas: 7

 Tipo de publicación: Artículo de Revista

 DOI: 10.1109/TED.2019.2935500

 ISSN: 0018-9383,1557-9646

 Proyecto español: TEC2015-67883-R ; RTI2018-096019-B-C31

 Url de la publicación: https://doi.org/10.1109/TED.2019.2935500

Autoría

GONZÁLEZ PÉREZ, BENITO

ANTONIO LAZARO GUILLÉN

NÚNEZ ORDÓNEZ, ANTONIO