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GaN HEMT class E2 resonant topologies for UHF DC/DC power conversion

Abstract: In this paper, the design and performance of class E 2 resonant topologies for dc/dc power conversion at UHFs are considered. Combining the use of RF gallium-nitride HEMT devices, both for the inverter and synchronous rectifier, with high- Q lumped-element terminating networks, peak efficiency values over 70% may be obtained. Control strategies based on carrier bursting, switching frequency modulation, or outphasing are also shown to be feasible. Taking advantage of their improved dynamic response, when compared to low-frequency more traditional switched-mode converters, a class E 3 polar transmitter for the EDGE standard has been designed and tested at 770 MHz, offering an average global efficiency over 46% at 4.3 W of output power, through RF-based amplitude and phase constituting branches. Finally, the potential of such a high frequency of operation in terms of power density is explored, absorbing undesired coil parasitics for the original LC series interconnecting network in a 1-GHz design methodology.

Otras publicaciones de la misma revista o congreso con autores/as de la Universidad de Cantabria

 Autoría: Garcia J., Marante R., De Las Nieves Ruiz Lavin M.,

 Fuente: IEEE Transactions on Microwave Theory and Techniques, 60(12), 2012, 4220-4229

Editorial: Institute of Electrical and Electronics Engineers Inc.

 Fecha de publicación: 01/12/2012

Nº de páginas: 10

Tipo de publicación: Artículo de Revista

 DOI: 10.1109/TMTT.2012.2222043

ISSN: 0018-9480,1557-9670

Proyecto español: TEC2011-29126-C03-01 ; CSD2008-00068

Url de la publicación: https://doi.org/10.1109/TMTT.2012.2222043