Abstract: Dilute nitrides based on GaAs constitute a family of compounds whose main characteristic is the band-gap tunability, depending on the nitrogen content. In this work we have focussed our attention on the indium free dilute nitrides, i.e. GaNAsSb with a bandgap of around 1.1 eV, to study the effects that doping has on the crystalline structure, electrical and optical properties of the material. For such purpose, p-doped and n-doped GaNAsSb layers were grown by molecular beam epitaxy and characterized using x-ray diffraction, spectroscopic ellipsometry and photoreflectance among other techniques. The GaNAsSb optical properties match the double band-anticrossing model which is the proposed one to explain the dilute nitride band structure. However, the determined optical bandgap value does not follow any trend with doping, neither with concentration nor type. This is related with doping effects on the crystalline quality and layer composition, thus inducing a Sb gradient along layer thickness together with variations in N and Sb concentrations for different doping levels. Besides these structural variations, the complex refraction index, Hall mobility and carrier concentration as a function of temperature have been determined for these GaNAsSb layers.

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