Abstract: This paper describes the design of a highly efficient and linear GaN HEMT power amplifier which may be used in WiMAX application. To improve linearity of highly efficient power amplifiers, a technique using diodes in the gate DC path was applied to TL and 2HT amplifier. This solution using diodes offers a good manner to improve linearity near saturation zone compared to the approach using only a DC gate resistor for TL (tuned load) case as well as for 2HT (second harmonic tuning approach). A 2.5 GHz 2HT power amplifier circuit was built, and measured data confirm the linearity improvement, particularly near saturation zone, as predicted by simulation, maintaining higher power performances. An output power of 36.8 dBm has been measured with an associated power added efficiency of 46.5% and carrier to third order intermodulation (C/I3) of 53.4 dBc. A 2HT PA also exhibits good performances across the full (2.3-2.7) GHz band. An output power ranging from (35-36.9) dBm with an associated gain of $12.9±0.9 and a power added efficiency ranging from (40-46)% are measured across the full (2.3-2.7) GHz band.

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