Abstract: Group-III monochalcogenides compounds are layered van der Waals semiconductors intensively studied for development of optoelectronic applications. Their large optical contrast between crystalline-amorphous phases is among the desirable properties for the new paradigm of reconfigurable devices. In this contribution we will present band and dielectric function simulations of GaX (X=S, Se, Te) using density-functional theory. Although the description of optical response poses a great challenge for single-particle formalisms, insight gained from detailed and orbital contributing is very useful in material engineering.

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