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Empty substrate integrated waveguide technology for E plane high-frequency and high-performance circuits

Abstract: Substrate integrated circuits (SIC) have attracted much attention in the last years because of their great potential of low cost, easy manufacturing, integration in a circuit board, and higher-quality factor than planar circuits. A first suite of SIC where the waves propagate through dielectric have been first developed, based on the well-known substrate integrated waveguide (SIW) and related technological implementations. One step further has been made with a new suite of empty substrate integrated waveguides, where the waves propagate through air, thus reducing the associated losses. This is the case of the empty substrate integrated waveguide (ESIW) or the air-filled substrate integrated waveguide (air-filled SIW). However, all these SIC are H plane structures, so classical H plane solutions in rectangular waveguides have already been mapped to most of these new SIC. In this paper a novel E plane empty substrate integrated waveguide (ESIW-E) is presented. This structure allows to easily map classical E plane solutions in rectangular waveguide to this new substrate integrated solution. It is similar to the ESIW, although more layers are needed to build the structure. A wideband transition (covering the frequency range between 33 GHz and 50 GHz) from microstrip to ESIW-E is designed and manufactured. Measurements are successfully compared with simulation, proving the validity of this new SIC. A broadband high-frequency phase shifter (for operation from 35 GHz to 47 GHz) is successfully implemented in ESIW-E, thus proving the good performance of this new SIC in a practical application.

 Autoría: Belenguer A., Cano J., Esteban H., Artal E., Boria V.,

 Fuente: Radio Science, 2017, 52(1), 49-69

 Editorial: American Geophysical Union

 Fecha de publicación: 01/01/2017

 Nº de páginas: 21

 Tipo de publicación: Artículo de Revista

 DOI: 10.1002/2016RS006181

 ISSN: 0048-6604,1944-799X

 Proyecto español: TEC2013-47037-C5-3-R ; TEC2013-47037-C5-1-R ; AYA2013-49759-EXP ; CSD2010-00064