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10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells

Abstract: In this paper, the experimental results of a 10 MeV proton irradiation on concentrator GaInP/GaAs/Ge lattice-matched triple-junction solar cells and their corresponding subcells are examined. Electro-optical characterization such as external quantum efficiency, light and dark I-V measurements, is performed together with theoretical device modeling in order to guide the analysis of the degradation behavior. The GaInP (on Ge) and Ge cell showed a power loss between beginning of life and end of life of about 4% while the GaInP/GaAs/Ge and GaAs solar cells exhibited the highest damage measured of 12% and 10%, respectively for an irradiation fluence equivalent to an 8-years satellite mission in Low Earth Orbit. The results from single-junction solar cells correlate well with those of triple-junction solar cells. The performance of concentrator solar cells structures is similar to that of traditional space-targeted designs reported in literature suggesting that no special changes may be required to use triple junction concentrator solar cells in space.

 Fuente: Solar Energy Materials & Solar Cells, 2017, 159, 576-582

Editorial: Elsevier

 Fecha de publicación: 01/01/2017

Nº de páginas: 7

Tipo de publicación: Artículo de Revista

 DOI: 10.1016/j.solmat.2016.09.042

ISSN: 1879-3398,0927-0248

 Proyecto español: TEC2012-37286

Url de la publicación: https://doi.org/10.1016/j.solmat.2016.09.042

Autoría

YACCUZZI, EXEQUIEL

ESPINET GONZÁLEZ, PILAR

BARRERA, MARCELA PATRICIA

BARRIGÓN MONTAÑÉS, ENRIQUE

IBARRA, MARIA LUJÁN

CONTRERAS, YEDILETH

GARCÍA, JAVIER ANDRÉS

LÓPEZ ESTRADA, ESTHER

ALURRALDE, MARTÍN A.

ALGORA DEL VALLE, CARLOS

GODFRIN, ELENA MARÍA

REY-STOLLE PRADO, IGNACIO

PLÁ, JUAN