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Abstract: This paper describes a complete modelling of the perimeter recombination of GaAs diodes which solves most unknowns and suppresses the limitations of previous models. Because of the three dimensional nature of the implemented model, it is able to simulate real devices. GaAs diodes on two epiwafers with different base doping levels, sizes and geometries, namely square and circular are manufactured. The validation of the model is achieved by fitting the experimental measurements of the dark IV curve of the manufactured GaAs diodes. A comprehensive 3-D description of the occurring phenomena affecting the perimeter recombination is supplied with the help of the model. Finally, the model is applied to concentrator GaAs solar cells to assess the impact of their doping level, size and geometry on the perimeter recombination.
Fuente: Solar Energy Materials & Solar Cells, 2014, 120(A), 48-58
Editorial: Elsevier
Fecha de publicación: 01/01/2014
Nº de páginas: 11
Tipo de publicación: Artículo de Revista
DOI: 10.1016/j.solmat.2013.08.009
ISSN: 1879-3398,0927-0248
Proyecto español: TEC2011-28639-C02-01
Url de la publicación: https://doi.org/10.1016/j.solmat.2013.08.009
Leer publicación
MARIO OCHOA GOMEZ
ALGORA DEL VALLE, CARLOS
ESPINET GONZÁLEZ, PILAR
GARCÍA VARA, IVÁN
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