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Timing performance and gain degradation after irradiation with protons and neutrons of Low Gain Avalanche Diodes based on a shallow and broad multiplication layer in a float-zone 35um and 50um thick silicon substrate

Abstract: The high-luminosity upgrade of the ATLAS and CMS experiments includes dedicated sub-detectors to perform the time-stamping of minimum ionizing particles (MIPs). These detectors will be exposed up to fluences in the range of and require a time resolution per detecting layer of 30 ps, for non-irradiated sensors, to ps (depending on the exposed fluences) for sensors at the end of their lifetime. To cope with these requirements, the low-gain avalanche diode (LGAD) has been chosen as the baseline detection technology. In this article, an in-depth radiation tolerance study on LGADs manufactured at IMB-CNM using a so-called shallow junction is presented. Proton irradiation at CERN-PS up to fluences of and neutron irradiation at JSI-Ljubljana up to were performed. Two different active thicknesses were studied: and Gain degradation, operation stability, and timing performance were evaluated.

Otras publicaciones de la misma revista o congreso con autores/as de la Universidad de Cantabria

 Fuente: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2023, 1055, 168522

Editorial: North-Holland ; Elsevier Science

 Fecha de publicación: 01/10/2023

Nº de páginas: 12

Tipo de publicación: Artículo de Revista

 DOI: 10.1016/j.nima.2023.168522

ISSN: 0168-9002,1872-9576

 Proyecto español: PID2020-113705RB-C31

Url de la publicación: https://doi.org/10.1016/j.nima.2023.168522

Autoría

DOBLAS, ALBERT

MARCOS FERNANDEZ GARCIA

FLORES, DAVID

SALVADOR HIDALGO VILLENA

EFREN NAVARRETE RAMOS

PELLEGRINI, GIULIO