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Atomically precise interfaces from non-stoichiometric deposition

Abstract: Complex oxide heterostructures display some of the most chemically abrupt, atomically precise interfaces, which is advantageous when constructing new interface phases with emergent properties by juxtaposing incompatible ground states. One might assume that atomically precise interfaces result from stoichiometric growth. Here we show that the most precise control is, however, obtained by using deliberate and specific non-stoichiometric growth conditions. For the precise growth of Sr n+1 Ti n O n+1 Ruddlesden-Popper (RP) phases, stoichiometric deposition leads to the loss of the first RP rock-salt double layer, but growing with a strontium-rich surface layer restores the bulk stoichiometry and ordering of the subsurface RP structure. Our results dramatically expand the materials that can be prepared in epitaxial heterostructures with precise interface control-from just the n=â ^end members (perovskites) to the entire RP homologous series-enabling the exploration of novel quantum phenomena at a richer variety of oxide interfaces.

 Fuente: NATURE COMMUNICATIONS 5:4530

 Editorial: Nature Publishing Group

 Fecha de publicación: 03/08/2014

 Nº de páginas: 8

 Tipo de publicación: Artículo de Revista

 DOI: 10.1038/ncomms5530

 ISSN: 2041-1723

 Url de la publicación: http://www.nature.com/ncomms/2014/140804/ncomms5530/full/ncomms5530.html

Autoría

NIE, YUEFENG

ZHU, Y.

LEE, CHEHUI

KOURKOUTIS, LENA FITTING ITTING

GHOSEZ, PHILIPPE H.

BAEK, D. J.

SUNG, S.

XI, XIAOXING

SHEN, KYLE

MULLER, DAVID A.

SCHLOM, DARRELL G.